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CoE Distinguished Speaker Lecture Series by Prof Arokia Nathan



Event Date 01 Aug 2017 (Tue), 03:00 PM - 04:00 PM
Venue Lecture Theatre 6, Block NS2-02-05 (Location Map)
Organiser College of Engineering (Email : eeehr@ntu.edu.sg )


Event Info

CoE Distinguished Speaker Lecture Series FY2017

Lecture by Prof Arokia Nathan from University of Cambridge at Lecture Theatre 6, NS2-02-05, 3PM to 4PM, 1 Aug 2017

 

Title

Oxides for the Post-Silicon Thin Film Electronics Era

 

Speaker

Professor Arokia Nathan holds the Chair of Photonic Systems and Displays in the Department of Engineering, Cambridge University. He received his PhD in Electrical Engineering from the University of Alberta. Following post-doctoral years at LSI Logic Corp., USA and ETH Zurich, Switzerland, he joined the University of Waterloo where he held the DALSA/NSERC Industrial Research Chair in sensor technology and subsequently the Canada Research Chair in nano-scale flexible circuits. He was a recipient of the 2001 NSERC E.W.R. Steacie Fellowship. In 2006, he moved to the UK to take up the Sumitomo Chair of Nanotechnology at the London Centre for Nanotechnology, University College London, where he received the Royal Society Wolfson Research Merit Award. He has held Visiting Professor appointments at the Physical Electronics Laboratory, ETH Zürich and the Engineering Department, Cambridge University, UK. He has published over 500 papers in the field of sensor technology and CAD, and thin film transistor electronics, and is a co-author of four books. He has over 60 patents filed/awarded and has founded/co-founded four spin-off companies. He serves on technical committees and editorial boards in various capacities. He is a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK), Fellow of IEEE (USA), and an IEEE/EDS Distinguished Lecturer.

 

Abstract

The oxide semiconductor is gaining significant interest for newly emerging application areas because of their wide band gap, hence high transparency and low OFF current, compared with the ubiquitous silicon thin-film technology. The oxide can be processed at room temperature and at low fabrication cost, which makes it amenable for integration on a wide range of substrate materials including plastic and paper. While the oxide transistor continues to evolve, producing devices with higher mobility, steeper sub-threshold slope and lower threshold voltage, practical circuits are constrained by issues related to non-uniformity, electrically- and illumination-induced instability, and temperature dependence. This talk will discuss critical design considerations showing how device-circuit interactions should be handled and how compensation methods can be implemented to stabilize systems behavior. In particular, for wearable devices and IoT, the quest for low power becomes highly compelling. We will discuss thin-film transistor operation near the OFF state, driven by the pivotal requirement of low supply voltage and ultralow power.



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