Project details

School of Electrical & Electronic Engineering


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Proj No. B2229-251
Title Development of in-situ plasma focused ion beam delayering for advanced 3 nm & below FINFET multi-core microprocessor
Summary Avanced microprocessors are aggressively scaled with current process technology advancing to 3 nm FINFET transistor technology. This presents a challenging tasks to uncover physical defects from die top-side due to multiple metallization layers.

Recently, gas-assisted xenon plasma focused ion beam (PFIB) delayering has demonstrated uniform delayering of the metal and dielectric layers achieving a planar surface of heterogeneous materials.

The main aim of the project is to further optimize the parameters for in-situ PFIB delayering to achieve uniform delayering on more challenging surfaces. These include areas with highly mismatched metal pattern density and multi-grained thicker Cu surfaces. Part of the project scope includes development of PFIB automated delayering recipe using iFast.

The student will have the opportunity to learn PFIB principles, advanced transistor characterization and electron microscopy. The student will also gain in depth knowledge of device fabrication technology and understand latest failure analysis tools and techniques.
Supervisor A/P Wonkeun Chang (Loc:S2 > S2 B2B > S2 B2B 51, Ext: +65 67904843)
Co-Supervisor -
RI Co-Supervisor -
Lab Centre for Optical Fibre Technology (COFT) (Loc: S1-B6b-02, ext 2723)
Single/Group: Single
Area: Microelectronics and Biomedical Electronics
ISP/RI/SMP/SCP?: ISP:
Vinod Narang / Dion Zudhistira
Senior Manager
Advanced Micro Devices
narang.vinod@amd.com