| Proj No. | A2035-251 |
| Title | Metal-Transferred Contacts for Optoelectronic Devices Based on 2D Heterostructures |
| Summary | Metal-semiconductor junctions are fundamental to a wide range of electronic and optoelectronic devices, significantly influencing their performance, efficiency, and application potential. The emergence of two-dimensional (2D) semiconductors has introduced exciting opportunities for device miniaturization and enhanced functionality, thanks to their exceptional physical and chemical properties. However, integrating 2D semiconductors with traditional three-dimensional (3D) metal electrodes has remained a persistent challenge. This project introduces an innovative metal-transferred contact technique designed to address these integration issues, enabling seamless contact formation between 3D metal electrodes and 2D materials (or perovskite materials) while overcoming the limitations of conventional approaches. By tackling the critical challenges of metal electrode integration with 2D materials and perovskites, this project aims to advance the development of next-generation electronic and optoelectronic devices with superior performance, compact designs, and versatile functionalities. The proposed metal transfer printing method has the potential to transform fabrication processes across a broad spectrum of devices, marking a significant leap forward in the evolution of modern electronic and optoelectronic systems. |
| Supervisor | Ast/P Chae Sanghoon (Loc:S2 > S2 B2B > S2 B2B 64, Ext: +65 67905393) |
| Co-Supervisor | - |
| RI Co-Supervisor | - |
| Lab | Characterization (Loc: S1-B2c-20) |
| Single/Group: | Single |
| Area: | Microelectronics and Biomedical Electronics |
| ISP/RI/SMP/SCP?: |