| Proj No. | A2009-251 |
| Title | TCAD Simulation Study of Extended Drain SOI MOSFET-1 |
| Summary | The SOI power MOSFET technology offers an economical alternative to the conventional III-V counterpart for RF applications. In this project, the student will learn to build an extended drain SOI MOSFET using TCAD process simulation tool and then study its electrical characteristics using the TCAD device simulation tool. This final year project forms a part of a larger research project aimed at understanding the RF reliability of the extended drain MOSFET device. |
| Supervisor | A/P Ang Diing Shenp (Loc:S2 > S2 B2C > S2 B2C 95, Ext: +65 67906023) |
| Co-Supervisor | - |
| RI Co-Supervisor | - |
| Lab | Semiconductor Characterization Lab (Loc: S1-B3C-27A) |
| Single/Group: | Single |
| Area: | Microelectronics and Biomedical Electronics |
| ISP/RI/SMP/SCP?: |