| Proj No. | A2016-251 |
| Title | Conductive-bridge resistive random access memory (CBRAM)-3 |
| Summary | Resistive memory is a novel technology slated for not only future terabit memory but also non von Neumann or brain-like computing application. Unlike existing memory which stores information in terms of electrical charges, resistive memory stores information in terms of resistance changes. It has attracted considerable interest in the last few years because it has a simple structure, consumes low power, switches at high speed (~ns) and can be integrated in the form of a 3D crossbar to achieve very high-density memory. The FYP students will join an existing research project that focuses on CBRAM, a type of resistive memory based on different chalcogenide materials. The scope of the project includes understanding how chalcogenide-based CBRAM devices work and measuring their electrical behaviors. We seek highly motivated students who like learning semiconductor device technology and immerse themselves in the lab for long hours pursuing hands-on experimental work. |
| Supervisor | A/P Ang Diing Shenp (Loc:S2 > S2 B2C > S2 B2C 95, Ext: +65 67906023) |
| Co-Supervisor | - |
| RI Co-Supervisor | - |
| Lab | Semiconductor Characterizatio (Loc: S1-B3C-27A) |
| Single/Group: | Single |
| Area: | Microelectronics and Biomedical Electronics |
| ISP/RI/SMP/SCP?: |