| Proj No. | A2015-251 |
| Title | RF switch device based on the resistance switching phenomenon |
| Summary | RF front-end modules (FEMs) widely used in mobile phones have become increasingly stringent and complicated with the continuous introduction of new standards such as 6G. RF switches are a critical component of such systems allowing tunability and compact circuit design. Traditionally, RF switches are conventional metal-oxide-semiconductor field-effect transistors fabricated using CMOS-compatible SOI technologies but scaling of such devices are approaching a stage of diminishing returns. Switches that operate based on a different principle of resistance switching have been proposed as an alternative, and evaluations are at an early stage. In this project, the student will have the opportunity to evaluate the potential of such devices, and the scope of work typically involves DC device characterization and parameter extraction. |
| Supervisor | A/P Ang Diing Shenp (Loc:S2 > S2 B2C > S2 B2C 95, Ext: +65 67906023) |
| Co-Supervisor | - |
| RI Co-Supervisor | - |
| Lab | Semiconductor Characterizatio (Loc: S1-B3C-27A) |
| Single/Group: | Single |
| Area: | Microelectronics and Biomedical Electronics |
| ISP/RI/SMP/SCP?: |