| Proj No. | A2200-251 |
| Title | Quantum engineering of 2D materials based transistors |
| Summary | 2D materials offer tremendous opportunities to develop next-generation transistors that work beyond Moore's law. Such transistors have the potential to enable technology node below 1 nm and achieve much higher energy efficiency. This project aims to develop field-effect transistors based on 2D materials and their heterostructures that approach the physical limit. We will first use the state-of-the-art techniques to fabricate high-quality transistors that works in the quantum regime. Then quantum phase transitions will be studied to enable a novel mechanism for ultralow-energy operation of the devices. |
| Supervisor | Ast/P Song Peng (Loc:S1 > S1 B1B > S1 B1B 40, Ext: +65 67905438) |
| Co-Supervisor | - |
| RI Co-Supervisor | - |
| Lab | Photonics II (Loc: S1-B3b-16) |
| Single/Group: | Single |
| Area: | Microelectronics and Biomedical Electronics |
| ISP/RI/SMP/SCP?: |