| Proj No. | A2166-251 |
| Title | Investigation of failure mechanisms for Gallium Nitride (GaN) based high-electron-mobility transistors (HEMTs) |
| Summary | Gallium Nitride (GaN) based high-electron-mobility transistors (HEMTs) such as AlGaN/GaN and InAlN/GaN HEMTs are very attractive for high-frequency and high-power device applications due to its inherent material properties such as wide band gap with high breakdown voltage and higher saturation velocity. Hence, these transistors are very promising for the important basic building blocks of many applications such as wireless communications, satellite communications and sensors etc. In this project, the student will learn the basic physics in device characterization and failure mechanisms of AlGaN/GaN and/or InAlN/GaN HEMTs under accelerated reliability tests. He/she will be involved in setting up methodology for GaN HEMTs accelerated tests. Data extraction and simple data analysis programming will be part of the test methodology setup. The final methodology will be evaluated by stressing the actual GaN HEMT devices. Hence, the student is required to perform and understand the various measurement techniques such as semiconductor parameter analyzer and pulsed current-voltage system to stress and characterize the fabricated GaN HEMTs for failure mode study. He/She will learn the various key device parameters of GaN HEMTs and optimize them for high performance device applications. |
| Supervisor | Prof Ng Geok Ing (Loc:S2 > S2 B2B > S2 B2B 69, Ext: +65 67905013) |
| Co-Supervisor | - |
| RI Co-Supervisor | - |
| Lab | Characterization (Loc: S1-B2c-20) |
| Single/Group: | Single |
| Area: | Microelectronics and Biomedical Electronics |
| ISP/RI/SMP/SCP?: |