| Proj No. | A2165-251 |
| Title | Studies of CMOS-compatible processes for Gallium Nitride High Electron Mobility Transistors |
| Summary | Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) are very attractive for high-frequency and high-power switching device applications due to its inherent material properties such as wide band gap with high breakdown voltage and higher saturation velocity. To reduce the costs of GaN HEMTs,it is necessary to adopt fabrication processes which are compatible to silicon CMOS processes. In this project, the student will investigate feasible CMOS-compatible processes for the key GaN HEMT fabrication steps. These include implant isolation process, non-gold ohmic contact formation etc.. The student is required to perform and understand the various measurement techniques for device isolation, ohmic and Schottky characteristics of the GaN HEMTs. He/She will also learn the various key parameters of device isolation, Ohmic contacts and Schottky diodes of AlGaN/GaN HEMT structure and optimize them for high performance device applications. |
| Supervisor | Prof Ng Geok Ing (Loc:S2 > S2 B2B > S2 B2B 69, Ext: +65 67905013) |
| Co-Supervisor | - |
| RI Co-Supervisor | - |
| Lab | Characterization (Loc: S1-B2c-20) |
| Single/Group: | Single |
| Area: | Microelectronics and Biomedical Electronics |
| ISP/RI/SMP/SCP?: |