| Proj No. | A2167-251 |
| Title | Studies of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) |
| Summary | Gallium Nitride (GaN) based High-Electron-Mobility Transistors (HEMTs) are very attractive for high-frequency and high-power device applications due to its inherent material properties such as wide band gap with high breakdown voltage and higher saturation velocity. Hence, these transistors are very promising for the important basic building blocks of many applications such as wireless communications, satellite communications and sensors etc. In this project, the student will learn the basic operation, characterization techniques and analysis of GaN HEMTs. Hence, the student is required to perform and understand the various measurement techniques such as semiconductor parameter analyzer and pulsed current-voltage system to characterize the fabricated GaN HEMTs. He/She will learn the various key device parameters of GaN HEMTs and optimize them for high performance device applications. |
| Supervisor | Prof Ng Geok Ing (Loc:S2 > S2 B2B > S2 B2B 69, Ext: +65 67905013) |
| Co-Supervisor | - |
| RI Co-Supervisor | - |
| Lab | Characterization (Loc: S1-B2c-20) |
| Single/Group: | Single |
| Area: | Microelectronics and Biomedical Electronics |
| ISP/RI/SMP/SCP?: |