Proj No. | A2264-251 |
Title | 2D material growth using CVD and cold-wall MOCVD |
Summary | Transition Metal Dichalcogenides (TMDs) have emerged as a promising class of two-dimensional materials with diverse properties ranging from semiconducting to superconducting behavior. While much research on TMD-based devices has been conducted using mechanically exfoliated 2D flakes, this method is challenging to scale up for industrial applications. The synthesis of high-quality, large-area TMDs is crucial for their integration into industrial applications and the development of novel electronic and optoelectronic devices. Chemical Vapor Deposition (CVD) has become the most assured fabrication technique for producing large-area, high-quality 2D TMDs at a competitive cost. Cold-wall Metal-Organic Chemical Vapor Deposition (MOCVD), a variant of this technique, offers precise control over gas flow of precursors and isolates the chemical reaction from the source. This method allows for the direct growth of TMDs on insulating substrates, which is advantageous for device fabrication. In this project, students will have the opportunity to tune CVD and cold-wall MOCVD recipes to produce highly crystalline 2D TMD films. Through this process, students will gain valuable experience in material growth and characterization techniques, essential skills for advancing the field of 2D materials and their applications in next-generation electronic and optoelectronic devices |
Supervisor | Prof Tay Beng Kang (Loc:S1 > S1 B1A > S1 B1A 29, Ext: +65 67904533) |
Co-Supervisor | - |
RI Co-Supervisor | - |
Lab | Nanoelectronics Lab. I (Loc: S1-B3a-01) |
Single/Group: | Single |
Area: | Microelectronics and Biomedical Electronics |
ISP/RI/SMP/SCP?: |