| Proj No. | A1073-251 |
| Title | Gate Driver Circuit Design for Wide Band Gap Power Devices |
| Summary | Wide band gap (WBG) power devices, such as SiC and GaN transistors, offer significant advantages in power electronics due to their superior efficiency, higher switching frequencies, and greater thermal stability compared to conventional silicon-based devices. However, the full potential of WBG devices can only be realized with optimized gate driver circuits capable of handling their unique characteristics, including fast switching speeds and high voltage requirements. This project aims to design and develop a gate driver circuit tailored specifically for WBG power devices, focusing on minimizing switching losses, ensuring robust protection mechanisms, and improving overall system reliability. The proposed research will involve simulation and experimental validation of the gate driver design, with an emphasis on enhancing performance in high-frequency power converters. The outcome of this project is expected to contribute to the broader adoption of WBG devices in applications demanding high efficiency and power. |
| Supervisor | A/P Tang Yi (Loc:S2 > S2 B2A > S2 B2A 07, Ext: +65 67905416) |
| Co-Supervisor | - |
| RI Co-Supervisor | - |
| Lab | Water & Energy Research Laboratory (Loc: S2.1-B3-03) |
| Single/Group: | Single |
| Area: | Electrical Power and Energy |
| ISP/RI/SMP/SCP?: |