| Proj No. | B2277-251 |
| Title | Die to wafer hybrid bonding for advanced packaging |
| Summary | Recently, Al2O3 has emerged as a promising alternative for the dielectric layer in hybrid bonding due to its notable ability to achieve a strong bonding energy. Additionally, high-quality Al2O3 films can be deposited using various deposition techniques at relatively low temperatures, notably using atomic layer deposition (ALD), while retaining outstanding thermal and chemical stability. While Al2O3 presents several promising features, integrating it in Cu hybrid bonding requires further development particularly on selective area deposition of the film in non-Cu bonding regions. Therefore, the main objective of this proposal is to perform fundamental study on the bonding mechanism of Al2O3 and developing a selective area deposition method with an end goal to achieve high bond strength, and reliable Cu hybrid bonding. With higher bond strength, it is envisaged that the areal ratio of Cu to dielectric can be relaxed hence further enhancing the achievable interconnect density for advanced packaging of die on wafer, enabling applications in AI hardware and more. |
| Supervisor | Prof Tan Chuan Seng (Loc:S2 > S2 B2C > S2 B2C 85, Ext: +65 67905402) |
| Co-Supervisor | - |
| RI Co-Supervisor | - |
| Lab | Characterization (Loc: S1-B2c-20) |
| Single/Group: | Single |
| Area: | Microelectronics and Biomedical Electronics |
| ISP/RI/SMP/SCP?: | ISP: Dr Prayudi Lianto Scientist Applied Materials prayudi_lianto@amat.com |