| Proj No. | B2278-251 |
| Title | Die on wafer bonding for high density interconnects |
| Summary | Recently, Al2O3 has emerged as a promising alternative for the dielectric layer in hybrid bonding due to its notable ability to achieve a strong bonding energy. Additionally, high-quality Al2O3 films can be deposited using various deposition techniques at relatively low temperatures, notably using atomic layer deposition (ALD), while retaining outstanding thermal and chemical stability. While Al2O3 presents several promising features, integrating it in Cu hybrid bonding requires further development particularly on selective area deposition of the film in non-Cu bonding regions. Therefore, the main objective of this proposal is to perform fundamental study on the bonding mechanism of Al2O3 and developing a selective area deposition method with an end goal to achieve high bond strength, and reliable Cu hybrid bonding. The scope includes surface preparation, bonding and characterization. The end goal is to achieve ultra fine pitch Cu interconnect (<5um) and high density 3D interconnects for future AI hardware. |
| Supervisor | Prof Tan Chuan Seng (Loc:S2 > S2 B2C > S2 B2C 85, Ext: +65 67905402) |
| Co-Supervisor | - |
| RI Co-Supervisor | - |
| Lab | Characterization (Loc: S1-B2c-20) |
| Single/Group: | Single |
| Area: | Microelectronics and Biomedical Electronics |
| ISP/RI/SMP/SCP?: | ISP: Dr Prayudi Lianto Scientist Applied Materials prayudi_lianto@amat.com |